Show Hamamatsu Avalanche Photo Diode 1204012967
This is all the information about APD 1204012967. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1204012967 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
432 V |
| Voltage for Gain 100 (T=+25°C): |
403.5 V |
| Dark current: |
14 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
335 |
| Position in Box: |
8 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10502 |
| |
|
| Shipment: |
|
| Grid number: |
262 |
| Position in grid: |
8 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 404.4628543 V T = -25 °C: 367.1594169 V |
| Voltage for Gain 150: |
T = +20 °C: 412.4217867 V T = -25 °C: 375.0605542 V |
| Voltage for Gain 200: |
T = +20 °C: 416.8255956 V T = -25 °C: 379.4654092 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.396264721 V-1 T = -25 °C: 4.5454557 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.533385437 V-1 T = -25 °C: 8.871998641 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.76678696 V-1 T = -25 °C: 15.48375376 V-1 |
| Break-through voltage: |
T = +20 °C: 432.2265229 V T = -25 °C: 395.1857491 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history