Show Hamamatsu Avalanche Photo Diode 1203012923
This is all the information about APD 1203012923. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1203012923 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F08 |
| Break-through voltage: |
436 V |
| Voltage for Gain 100 (T=+25°C): |
407.3 V |
| Dark current: |
11.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
288 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10199 |
| |
|
| Shipment: |
|
| Grid number: |
260 |
| Position in grid: |
4 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.233139 V T = -25 °C: 370.3046738 V |
| Voltage for Gain 150: |
T = +20 °C: 415.294475 V T = -25 °C: 378.2998807 V |
| Voltage for Gain 200: |
T = +20 °C: 419.7573178 V T = -25 °C: 382.7319367 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.404517651 V-1 T = -25 °C: 4.451208735 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.506110316 V-1 T = -25 °C: 8.550187312 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.632049 V-1 T = -25 °C: 14.77455673 V-1 |
| Break-through voltage: |
T = +20 °C: 435.0543873 V T = -25 °C: 398.2658803 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history