Show Hamamatsu Avalanche Photo Diode 1203012916
This is all the information about APD 1203012916. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1203012916 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
415.7 V |
| Dark current: |
11.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
376 |
| Position in Box: |
17 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
259 |
| Position in grid: |
18 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
415.7 V (not connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.3898368 V T = -25 °C: 379.6678858 V |
| Voltage for Gain 150: |
T = +20 °C: 424.2883789 V T = -25 °C: 387.5138966 V |
| Voltage for Gain 200: |
T = +20 °C: 428.6594568 V T = -25 °C: 391.8405079 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.427668189 V-1 T = -25 °C: 4.778822713 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.659328174 V-1 T = -25 °C: 8.404545673 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00589367 V-1 T = -25 °C: 14.83694385 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9374117 V T = -25 °C: 407.6337916 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history