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Show Hamamatsu Avalanche Photo Diode 1201012808


This is all the information about APD 1201012808. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1201012808
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C07
Break-through voltage: 442 V
Voltage for Gain 100 (T=+25°C): 413.8 V
Dark current: 7.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 255
Position in grid: 1
Arrival for irradiation: 29. Sep 2017
Sent for analysis after irradiation: 23. Nov 2017
Return for assembly: none
   
Irradiation:  
Date: 22. Nov 2017
Dose used: 45 Gy
Temperature: 20 °C
Position: 1
Bias voltage: 413.8 V     (connected)
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
23. Nov 2017 11:58:27 CET markus.moritz Entered shipped after irradiation date.
23. Nov 2017 11:54:44 CET markus.moritz Entered irradiation information.
29. Sep 2017 11:45:42 CEST markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:27:53 CEST Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:37:49 CEST Tobias Imported from Hamamatsu datasheet.