Show Hamamatsu Avalanche Photo Diode 1201012760
This is all the information about APD 1201012760. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1201012760 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E14 |
Break-through voltage: |
446 V |
Voltage for Gain 100 (T=+25°C): |
417.9 V |
Dark current: |
7.7 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
334 |
Position in Box: |
32 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10766 |
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Shipment: |
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Grid number: |
252 |
Position in grid: |
9 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 418.3108218 V T = -25 °C: 381.5544863 V |
Voltage for Gain 150: |
T = +20 °C: 426.2402432 V T = -25 °C: 389.4027667 V |
Voltage for Gain 200: |
T = +20 °C: 430.6366264 V T = -25 °C: 393.7511011 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.437839972 V-1 T = -25 °C: 4.42162487 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.702124944 V-1 T = -25 °C: 8.624593973 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.10782295 V-1 T = -25 °C: 15.00548 V-1 |
Break-through voltage: |
T = +20 °C: 446.1637683 V T = -25 °C: 409.5194654 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history