Show Hamamatsu Avalanche Photo Diode 1201012756
This is all the information about APD 1201012756. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1201012756 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D12 |
| Break-through voltage: |
447 V |
| Voltage for Gain 100 (T=+25°C): |
418.8 V |
| Dark current: |
8.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
334 |
| Position in Box: |
28 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10765 |
| |
|
| Shipment: |
|
| Grid number: |
252 |
| Position in grid: |
1 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 419.7635787 V T = -25 °C: 382.7134242 V |
| Voltage for Gain 150: |
T = +20 °C: 427.655067 V T = -25 °C: 390.6224111 V |
| Voltage for Gain 200: |
T = +20 °C: 432.0243087 V T = -25 °C: 395.0056904 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.639076135 V-1 T = -25 °C: 4.644683255 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.204551709 V-1 T = -25 °C: 9.154880056 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.32717915 V-1 T = -25 °C: 14.27794753 V-1 |
| Break-through voltage: |
T = +20 °C: 447.1696526 V T = -25 °C: 410.6716289 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
