Show Hamamatsu Avalanche Photo Diode 1201012751
This is all the information about APD 1201012751. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1201012751 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D15 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
415.1 V |
| Dark current: |
8.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
334 |
| Position in Box: |
24 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10765 |
| |
|
| Shipment: |
|
| Grid number: |
252 |
| Position in grid: |
12 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 415.9532209 V T = -25 °C: 378.7601942 V |
| Voltage for Gain 150: |
T = +20 °C: 423.824414 V T = -25 °C: 386.6318218 V |
| Voltage for Gain 200: |
T = +20 °C: 428.1791192 V T = -25 °C: 390.9803984 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.573768666 V-1 T = -25 °C: 4.616247079 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.045429143 V-1 T = -25 °C: 9.226041205 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.09552971 V-1 T = -25 °C: 14.3919969 V-1 |
| Break-through voltage: |
T = +20 °C: 441.0576004 V T = -25 °C: 404.5960759 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
