Show Hamamatsu Avalanche Photo Diode 1201012750
This is all the information about APD 1201012750. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1201012750 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F10 |
| Break-through voltage: |
443 V |
| Voltage for Gain 100 (T=+25°C): |
414.3 V |
| Dark current: |
27.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
334 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10765 |
| |
|
| Shipment: |
|
| Grid number: |
252 |
| Position in grid: |
10 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 414.8644037 V T = -25 °C: 377.6231372 V |
| Voltage for Gain 150: |
T = +20 °C: 422.7681283 V T = -25 °C: 385.5275539 V |
| Voltage for Gain 200: |
T = +20 °C: 427.1476225 V T = -25 °C: 389.8962979 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.617608794 V-1 T = -25 °C: 4.358125827 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.124348352 V-1 T = -25 °C: 8.475959216 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.21781569 V-1 T = -25 °C: 14.62225825 V-1 |
| Break-through voltage: |
T = +20 °C: 442.3545762 V T = -25 °C: 405.2851348 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
