Show Hamamatsu Avalanche Photo Diode 1201012746
This is all the information about APD 1201012746. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1201012746 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G12 |
| Break-through voltage: |
446 V |
| Voltage for Gain 100 (T=+25°C): |
417.1 V |
| Dark current: |
8.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
334 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10765 |
| |
|
| Shipment: |
|
| Grid number: |
252 |
| Position in grid: |
2 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.2525401 V T = -25 °C: 381.0451151 V |
| Voltage for Gain 150: |
T = +20 °C: 426.081204 V T = -25 °C: 388.8998485 V |
| Voltage for Gain 200: |
T = +20 °C: 430.4312127 V T = -25 °C: 393.2736664 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.492872415 V-1 T = -25 °C: 4.562890338 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.888860973 V-1 T = -25 °C: 8.995123225 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.61923998 V-1 T = -25 °C: 13.98214042 V-1 |
| Break-through voltage: |
T = +20 °C: 445.4406916 V T = -25 °C: 409.1770877 V |
| |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
