Show Hamamatsu Avalanche Photo Diode 1201012739
This is all the information about APD 1201012739. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1201012739 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
447 V |
Voltage for Gain 100 (T=+25°C): |
419.1 V |
Dark current: |
7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
518 |
Position in Box: |
10 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10696 |
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Shipment: |
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Grid number: |
251 |
Position in grid: |
9 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 419.897523 V T = -25 °C: 383.3330898 V |
Voltage for Gain 150: |
T = +20 °C: 427.8977658 V T = -25 °C: 391.2735528 V |
Voltage for Gain 200: |
T = +20 °C: 432.3493126 V T = -25 °C: 395.6862926 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.540490955 V-1 T = -25 °C: 4.435071711 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.888332912 V-1 T = -25 °C: 8.626618624 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.72848641 V-1 T = -25 °C: 14.9427619 V-1 |
Break-through voltage: |
T = +20 °C: 444.9741809 V T = -25 °C: 411.2518684 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history