Show Hamamatsu Avalanche Photo Diode 1201012736
This is all the information about APD 1201012736. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1201012736 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
446 V |
| Voltage for Gain 100 (T=+25°C): |
416.7 V |
| Dark current: |
9.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
518 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10696 |
| |
|
| Shipment: |
|
| Grid number: |
251 |
| Position in grid: |
3 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 417.7963059 V T = -25 °C: 380.2630213 V |
| Voltage for Gain 150: |
T = +20 °C: 425.859265 V T = -25 °C: 388.2980428 V |
| Voltage for Gain 200: |
T = +20 °C: 430.3422942 V T = -25 °C: 392.7551507 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.541895744 V-1 T = -25 °C: 4.398287506 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.869357451 V-1 T = -25 °C: 8.502157954 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.65480215 V-1 T = -25 °C: 14.63540575 V-1 |
| Break-through voltage: |
T = +20 °C: 444.9443947 V T = -25 °C: 408.8633928 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
