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Show Hamamatsu Avalanche Photo Diode 0923010696


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Subdetector specification:  
Serial: 0923010696
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit to Mainz
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E09
Break-through voltage: 404 V
Voltage for Gain 100 (T=+25°C): 375.3 V
Dark current: 4.8 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 327
Position in Box: 17
EP1 batch: none
EP1 batch after irradiation: 10506
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 375.4761298 V     T = -25 °C: 340.7462231 V
Voltage for Gain 150: T = +20 °C: 383.2999977 V     T = -25 °C: 347.9416905 V
Voltage for Gain 200: T = +20 °C: 387.6747935 V     T = -25 °C: 351.9948766 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.465876964 V-1     T = -25 °C: 5.16692898 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.664849035 V-1     T = -25 °C: 9.723385443 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.98807166 V-1     T = -25 °C: 15.43451197 V-1
Break-through voltage: T = +20 °C: 403.2792568 V     T = -25 °C: 367.1180484 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:58:35 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:30:17 CET jreher Updated box and position via API.
07. Oct 2020 15:45:22 CEST jreher Updated APD location via API.
11. Aug 2020 17:53:27 CEST jreher Updated APD location via API.
21. Jul 2020 16:26:20 CEST jreher Updated APD batch assignment via API.
22. Jun 2016 15:37:46 CEST Tobias Imported from Hamamatsu datasheet.