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Show Hamamatsu Avalanche Photo Diode 0923010678


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Subdetector specification:  
Serial: 0923010678
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit to Mainz
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D13
Break-through voltage: 412 V
Voltage for Gain 100 (T=+25°C): 382.7 V
Dark current: 5.1 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 334
Position in Box: 50
EP1 batch: none
EP1 batch after irradiation: 10505
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 383.1201396 V     T = -25 °C: 347.388465 V
Voltage for Gain 150: T = +20 °C: 391.0640779 V     T = -25 °C: 354.8165944 V
Voltage for Gain 200: T = +20 °C: 395.4920929 V     T = -25 °C: 359.013685 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.494928379 V-1     T = -25 °C: 4.676998549 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.741967128 V-1     T = -25 °C: 9.470839071 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.09439451 V-1     T = -25 °C: 14.61058796 V-1
Break-through voltage: T = +20 °C: 408.0918681 V     T = -25 °C: 374.7541647 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:58:32 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:31:08 CET jreher Updated box and position via API.
07. Oct 2020 15:45:30 CEST jreher Updated APD location via API.
11. Aug 2020 17:53:34 CEST jreher Updated APD location via API.
21. Jul 2020 16:26:04 CEST jreher Updated APD batch assignment via API.
22. Jun 2016 15:37:45 CEST Tobias Imported from Hamamatsu datasheet.