Show Hamamatsu Avalanche Photo Diode 0911009796
This is all the information about APD 0911009796. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0911009796 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
374.5 V |
| Dark current: |
3.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
292 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10207 |
| |
|
| Shipment: |
|
| Grid number: |
210 |
| Position in grid: |
18 |
| Arrival for irradiation: |
10. Jun 2016 |
| Sent for analysis after irradiation: |
23. Jun 2016 |
| Return for assembly: |
04. Aug 2016 |
| |
|
| Irradiation: |
|
| Date: |
20. Jun 2016 |
| Dose used: |
37 Gy |
| Temperature: |
25 °C |
| Position: |
2 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
20. Jun 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 374.7110891 V T = -25 °C: 339.5586269 V |
| Voltage for Gain 150: |
T = +20 °C: 382.5741382 V T = -25 °C: 346.8462542 V |
| Voltage for Gain 200: |
T = +20 °C: 386.9486817 V T = -25 °C: 350.9453909 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.393857988 V-1 T = -25 °C: 4.775870005 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.47786639 V-1 T = -25 °C: 9.779800839 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6126041 V-1 T = -25 °C: 15.50026286 V-1 |
| Break-through voltage: |
T = +20 °C: 402.6999038 V T = -25 °C: 366.4548476 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
