Show Hamamatsu Avalanche Photo Diode 0910009750
This is all the information about APD 0910009750. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0910009750 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
390.1 V |
| Dark current: |
4.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
380 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10580 |
| |
|
| Shipment: |
|
| Grid number: |
208 |
| Position in grid: |
8 |
| Arrival for irradiation: |
12. Jul 2016 |
| Sent for analysis after irradiation: |
22. Jul 2016 |
| Return for assembly: |
19. Sep 2016 |
| |
|
| Irradiation: |
|
| Date: |
12. Jul 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
4 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
12. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.9434735 V T = -25 °C: 353.9768088 V |
| Voltage for Gain 150: |
T = +20 °C: 398.8640846 V T = -25 °C: 361.7189767 V |
| Voltage for Gain 200: |
T = +20 °C: 403.2545149 V T = -25 °C: 366.0869599 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.562310313 V-1 T = -25 °C: 4.671249568 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.075982235 V-1 T = -25 °C: 9.292445761 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.0998142 V-1 T = -25 °C: 14.38194369 V-1 |
| Break-through voltage: |
T = +20 °C: 418.7072162 V T = -25 °C: 382.2747728 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
