Show Hamamatsu Avalanche Photo Diode 0910009725
This is all the information about APD 0910009725. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0910009725 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D11 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.8 V |
| Dark current: |
5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
289 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10201 |
| |
|
| Shipment: |
|
| Grid number: |
207 |
| Position in grid: |
2 |
| Arrival for irradiation: |
15. May 2016 |
| Sent for analysis after irradiation: |
23. Jun 2016 |
| Return for assembly: |
20. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
20. May 2016 |
| Dose used: |
57 Gy |
| Temperature: |
-25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
20. May 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.1007269 V T = -25 °C: 353.8075632 V |
| Voltage for Gain 150: |
T = +20 °C: 397.9652939 V T = -25 °C: 361.3381422 V |
| Voltage for Gain 200: |
T = +20 °C: 402.3228645 V T = -25 °C: 365.5729086 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.596629873 V-1 T = -25 °C: 4.926837698 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.091557865 V-1 T = -25 °C: 9.053894223 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.23056722 V-1 T = -25 °C: 16.05927434 V-1 |
| Break-through voltage: |
T = +20 °C: 417.7772748 V T = -25 °C: 381.1241564 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
