Show Hamamatsu Avalanche Photo Diode 0909009643
This is all the information about APD 0909009643. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0909009643 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.4 V |
| Dark current: |
3.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
304 |
| Position in Box: |
45 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10375 |
| |
|
| Shipment: |
|
| Grid number: |
203 |
| Position in grid: |
14 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
383.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.2780371 V T = -25 °C: 347.7399244 V |
| Voltage for Gain 150: |
T = +20 °C: 391.2749721 V T = -25 °C: 355.2200392 V |
| Voltage for Gain 200: |
T = +20 °C: 395.7330041 V T = -25 °C: 359.4425393 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.468457583 V-1 T = -25 °C: 4.616574488 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.624153213 V-1 T = -25 °C: 9.166496255 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.86109645 V-1 T = -25 °C: 14.28670017 V-1 |
| Break-through voltage: |
T = +20 °C: 411.8674999 V T = -25 °C: 375.3468695 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history