Show Hamamatsu Avalanche Photo Diode 0909009638
This is all the information about APD 0909009638. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0909009638 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.9 V |
| Dark current: |
3.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
304 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10375 |
| |
|
| Shipment: |
|
| Grid number: |
203 |
| Position in grid: |
4 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
384.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.5865482 V T = -25 °C: 348.9384702 V |
| Voltage for Gain 150: |
T = +20 °C: 392.5756259 V T = -25 °C: 356.3905035 V |
| Voltage for Gain 200: |
T = +20 °C: 397.0103739 V T = -25 °C: 360.5912325 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.371278636 V-1 T = -25 °C: 4.913368687 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.398873416 V-1 T = -25 °C: 9.075823793 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.39458201 V-1 T = -25 °C: 16.02543736 V-1 |
| Break-through voltage: |
T = +20 °C: 412.7612645 V T = -25 °C: 376.0943045 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
