Show Hamamatsu Avalanche Photo Diode 0909009635
This is all the information about APD 0909009635. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0909009635 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F03 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.4 V |
| Dark current: |
2.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
304 |
| Position in Box: |
38 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10375 |
| |
|
| Shipment: |
|
| Grid number: |
203 |
| Position in grid: |
0 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
385.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.4929123 V T = -25 °C: 349.9570959 V |
| Voltage for Gain 150: |
T = +20 °C: 393.5177095 V T = -25 °C: 357.4573353 V |
| Voltage for Gain 200: |
T = +20 °C: 397.9769092 V T = -25 °C: 361.6785037 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.33862837 V-1 T = -25 °C: 4.84807528 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.336124563 V-1 T = -25 °C: 8.896074317 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.22854394 V-1 T = -25 °C: 15.47782979 V-1 |
| Break-through voltage: |
T = +20 °C: 413.8818494 V T = -25 °C: 377.5466049 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
