Show Hamamatsu Avalanche Photo Diode 0908009539
					
					This is all the information about APD 0908009539. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
							  | 
						
						
							| Serial: | 
							0908009539 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							Bochum | 
						
						
							|   | 
							  | 
						
						
							| Installation information: | 
							  | 
						
						
							| Label: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Manufacturer information: | 
							  | 
						
						
							| Wafer position: | 
							F14 | 
						
						
							| Break-through voltage: | 
							416 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							387.9 V | 
						
						
							| Dark current: | 
							5.8 nA | 
						
						
							|   | 
							  | 
						
						
							| Screening Logistics: | 
							  | 
						
						
							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							305 | 
						
						
							| Position in Box: | 
							32 | 
						
						
							| EP1 batch: | 
							none | 
						
						
							| EP1 batch after irradiation: | 
							10376 | 
						
						
							|   | 
							  | 
						
						
							| Shipment: | 
							  | 
						
						
							| Grid number: | 
							199 | 
						
						
							| Position in grid: | 
							10 | 
						
						
							| Arrival for irradiation: | 
							30. Oct 2017 | 
						
						
							| Sent for analysis after irradiation: | 
							17. Nov 2017 | 
						
						
							| Return for assembly: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Irradiation: | 
							  | 
						
						
							| Date: | 
							16. Nov 2017 | 
						
						
							| Dose used: | 
							45 Gy | 
						
						
							| Temperature: | 
							20 °C | 
						
						
							| Position: | 
							2 | 
						
						
							| Bias voltage: | 
							387.9 V     (connected) | 
						
						
							|   | 
							  | 
						
						
							| Annealing: | 
							  | 
						
						
							| Date: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Duration: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Measurement results: | 
							  | 
						
						
							| Voltage for Gain 100: | 
							T = +20 °C: 387.467572 V     T = -25 °C: 351.6163692 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 395.4782211 V     T = -25 °C: 359.227249 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 399.9055038 V     T = -25 °C: 363.4920044 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.338855949 V-1     T = -25 °C: 4.543562847 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 9.200502935 V-1     T = -25 °C: 8.958455513 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 14.29291078 V-1     T = -25 °C: 15.69505188 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 410.3084292 V     T = -25 °C: 379.1067151 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
							| No characteristics available! | 
						
					
					
						
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					Progression of the current during irradiation
					
						
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							Notes | 
						
						
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