Show Hamamatsu Avalanche Photo Diode 0908009536
This is all the information about APD 0908009536. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0908009536 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.2 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
305 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10376 |
| |
|
| Shipment: |
|
| Grid number: |
199 |
| Position in grid: |
4 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
378.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.5525571 V T = -25 °C: 343.3005326 V |
| Voltage for Gain 150: |
T = +20 °C: 386.5250832 V T = -25 °C: 350.6721934 V |
| Voltage for Gain 200: |
T = +20 °C: 390.9589513 V T = -25 °C: 354.8098414 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.355115948 V-1 T = -25 °C: 4.830931697 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.212029867 V-1 T = -25 °C: 9.795118017 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.20744084 V-1 T = -25 °C: 15.47913087 V-1 |
| Break-through voltage: |
T = +20 °C: 406.8925713 V T = -25 °C: 370.2978559 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
