Show Hamamatsu Avalanche Photo Diode 0905009319
This is all the information about APD 0905009319. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0905009319 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D11 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.1 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
379 |
| Position in Box: |
50 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10580 |
| |
|
| Shipment: |
|
| Grid number: |
190 |
| Position in grid: |
5 |
| Arrival for irradiation: |
10. Jun 2016 |
| Sent for analysis after irradiation: |
08. Jul 2016 |
| Return for assembly: |
11. Jul 2016 |
| |
|
| Irradiation: |
|
| Date: |
20. Jun 2016 |
| Dose used: |
37 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
20. Jun 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.4607301 V T = -25 °C: 344.0764173 V |
| Voltage for Gain 150: |
T = +20 °C: 387.3887426 V T = -25 °C: 351.1749552 V |
| Voltage for Gain 200: |
T = +20 °C: 391.7834442 V T = -25 °C: 355.2512634 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.397005588 V-1 T = -25 °C: 4.417316622 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.500846063 V-1 T = -25 °C: 13.5557471 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.71030507 V-1 T = -25 °C: 14.71476644 V-1 |
| Break-through voltage: |
T = +20 °C: 407.2006426 V T = -25 °C: 370.818316 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history