Show Hamamatsu Avalanche Photo Diode 0904009242
This is all the information about APD 0904009242. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0904009242 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D14 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
387 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
294 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10358 |
| |
|
| Shipment: |
|
| Grid number: |
186 |
| Position in grid: |
8 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
387 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.3066347 V T = -25 °C: 351.624792 V |
| Voltage for Gain 150: |
T = +20 °C: 395.2369078 V T = -25 °C: 359.1915037 V |
| Voltage for Gain 200: |
T = +20 °C: 399.6334596 V T = -25 °C: 363.3994124 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.455981463 V-1 T = -25 °C: 4.700172988 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.723705433 V-1 T = -25 °C: 8.833412781 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.18044338 V-1 T = -25 °C: 15.70127723 V-1 |
| Break-through voltage: |
T = +20 °C: 414.7569943 V T = -25 °C: 378.3724443 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history