Show Hamamatsu Avalanche Photo Diode 0904009239
This is all the information about APD 0904009239. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0904009239 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D13 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.4 V |
| Dark current: |
5.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
294 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10358 |
| |
|
| Shipment: |
|
| Grid number: |
186 |
| Position in grid: |
2 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
387.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.7961975 V T = -25 °C: 351.6641874 V |
| Voltage for Gain 150: |
T = +20 °C: 395.7476428 V T = -25 °C: 359.2697325 V |
| Voltage for Gain 200: |
T = +20 °C: 400.1699871 V T = -25 °C: 363.4850146 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.564283671 V-1 T = -25 °C: 5.079938131 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.970744813 V-1 T = -25 °C: 8.399001318 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.9115168 V-1 T = -25 °C: 16.27987952 V-1 |
| Break-through voltage: |
T = +20 °C: 415.7588772 V T = -25 °C: 379.2337743 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
