Show Hamamatsu Avalanche Photo Diode 0902009233
This is all the information about APD 0902009233. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0902009233 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E04 |
Break-through voltage: |
403 V |
Voltage for Gain 100 (T=+25°C): |
374 V |
Dark current: |
13.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
365 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10556 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 374.6545772 V T = -25 °C: 339.7082838 V |
Voltage for Gain 150: |
T = +20 °C: 382.5010509 V T = -25 °C: 346.9090112 V |
Voltage for Gain 200: |
T = +20 °C: 386.891672 V T = -25 °C: 350.9635009 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.390210528 V-1 T = -25 °C: 4.783673721 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.371572309 V-1 T = -25 °C: 9.831511099 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.8526874 V-1 T = -25 °C: 15.72634723 V-1 |
Break-through voltage: |
T = +20 °C: 402.1692934 V T = -25 °C: 365.9909114 V |
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Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history