Show Hamamatsu Avalanche Photo Diode 0902009216
This is all the information about APD 0902009216. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009216 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2416027204/0902009216 |
| Unit: |
#3034 (barcode 1309033232) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
375 V |
| Dark current: |
10.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
184 |
| Position in Box: |
1 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10106 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
09. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
04. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
05. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 374.8855335 V T = -25 °C: 340.1239579 V |
| Voltage for Gain 150: |
T = +20 °C: 382.6981307 V T = -25 °C: 347.3626675 V |
| Voltage for Gain 200: |
T = +20 °C: 387.0362822 V T = -25 °C: 351.4337362 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.685436598 V-1 T = -25 °C: 5.085061142 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.551253546 V-1 T = -25 °C: 9.421737713 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.95258395 V-1 T = -25 °C: 15.12819872 V-1 |
| Break-through voltage: |
T = +20 °C: 399.6725152 V T = -25 °C: 365.9845119 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
