Show Hamamatsu Avalanche Photo Diode 0902009198
This is all the information about APD 0902009198. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009198 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H10 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.3 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
52 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10084 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
04. Jun 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. May 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
29. May 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.0987125 V T = -25 °C: 344.8265602 V |
| Voltage for Gain 150: |
T = +20 °C: 388.024991 V T = -25 °C: 352.2385605 V |
| Voltage for Gain 200: |
T = +20 °C: 392.4513402 V T = -25 °C: 356.4374457 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.365658188 V-1 T = -25 °C: 4.775073332 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.972688115 V-1 T = -25 °C: 9.33078129 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.11619937 V-1 T = -25 °C: 15.89884755 V-1 |
| Break-through voltage: |
T = +20 °C: 406.3747598 V T = -25 °C: 371.036818 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history