Show Hamamatsu Avalanche Photo Diode 0902009195
This is all the information about APD 0902009195. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009195 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H08 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.2 V |
| Dark current: |
6.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
56 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10084 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
04. Jun 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. May 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
29. May 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.8617263 V T = -25 °C: 343.6938897 V |
| Voltage for Gain 150: |
T = +20 °C: 386.7953878 V T = -25 °C: 351.0843312 V |
| Voltage for Gain 200: |
T = +20 °C: 391.2124704 V T = -25 °C: 355.264173 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.47596016 V-1 T = -25 °C: 4.896679805 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.443800095 V-1 T = -25 °C: 9.604874027 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.01473947 V-1 T = -25 °C: 14.65932233 V-1 |
| Break-through voltage: |
T = +20 °C: 406.6919475 V T = -25 °C: 370.3363504 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
