Show Hamamatsu Avalanche Photo Diode 0902009185
This is all the information about APD 0902009185. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009185 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0819008684/0902009185 |
| Unit: |
#3704 (barcode 1309037094) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F08 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
375.9 V |
| Dark current: |
10.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
55 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10083 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
04. Jun 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. May 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
29. May 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.1279469 V T = -25 °C: 340.8072687 V |
| Voltage for Gain 150: |
T = +20 °C: 383.9202763 V T = -25 °C: 348.0608275 V |
| Voltage for Gain 200: |
T = +20 °C: 388.275427 V T = -25 °C: 352.148287 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.585232192 V-1 T = -25 °C: 4.865484334 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.744843368 V-1 T = -25 °C: 9.094742948 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.22701053 V-1 T = -25 °C: 15.24807904 V-1 |
| Break-through voltage: |
T = +20 °C: 403.1033093 V T = -25 °C: 366.8006347 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history