Show Hamamatsu Avalanche Photo Diode 0902009183
This is all the information about APD 0902009183. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009183 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C12 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.5 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
55 |
| Position in Box: |
46 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10083 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
04. Jun 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. May 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
29. May 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.2865291 V T = -25 °C: 343.760985 V |
| Voltage for Gain 150: |
T = +20 °C: 387.1629896 V T = -25 °C: 351.0903764 V |
| Voltage for Gain 200: |
T = +20 °C: 391.5522259 V T = -25 °C: 355.2373842 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.479520384 V-1 T = -25 °C: 5.05296941 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.545625834 V-1 T = -25 °C: 9.449840226 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.16005816 V-1 T = -25 °C: 14.14457065 V-1 |
| Break-through voltage: |
T = +20 °C: 406.9194645 V T = -25 °C: 370.4762656 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
