Show Hamamatsu Avalanche Photo Diode 0902009182
This is all the information about APD 0902009182. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009182 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D14 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.1 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
55 |
| Position in Box: |
45 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10083 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
04. Jun 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. May 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
29. May 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.5587156 V T = -25 °C: 347.5194439 V |
| Voltage for Gain 150: |
T = +20 °C: 390.4801666 V T = -25 °C: 354.932112 V |
| Voltage for Gain 200: |
T = +20 °C: 394.8460535 V T = -25 °C: 359.1418762 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.345559812 V-1 T = -25 °C: 4.68801338 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.317674497 V-1 T = -25 °C: 8.998900594 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.64833528 V-1 T = -25 °C: 14.55921208 V-1 |
| Break-through voltage: |
T = +20 °C: 412.7061959 V T = -25 °C: 373.9509585 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history