Show Hamamatsu Avalanche Photo Diode 0902009180
					
					This is all the information about APD 0902009180. If it is wrong, edit the data.
					
						
							| Subdetector specification: |  | 
						
							| Serial: | 0902009180 | 
						
							| Type: | Hamamatsu Avalanche Photo Diode | 
						
							| Detector: | unassigned | 
						
							| Unit: | unassigned | 
						
							| Preamp: | 0 | 
						
							| Current location: | Bochum | 
						
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							| Installation information: |  | 
						
							| Label: | none | 
						
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							| Manufacturer information: |  | 
						
							| Wafer position: | D11 | 
						
							| Break-through voltage: | 406 V | 
						
							| Voltage for Gain 100 (T=+25°C): | 376.9 V | 
						
							| Dark current: | 7.8 nA | 
						
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							| Screening Logistics: |  | 
						
							| Available: | Yes | 
						
							| Storage Box: | 55 | 
						
							| Position in Box: | 43 | 
						
							| EP1 batch: | none | 
						
							| EP1 batch after irradiation: | 10083 | 
						
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							| Shipment: |  | 
						
							| Grid number: | none | 
						
							| Position in grid: | none | 
						
							| Arrival for irradiation: | 18. Apr 2019 | 
						
							| Sent for analysis after irradiation: | 04. Jun 2019 | 
						
							| Return for assembly: | none | 
						
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							| Irradiation: |  | 
						
							| Date: | 29. May 2019 | 
						
							| Dose used: | 37 Gy | 
						
							| Temperature: | 20 °C | 
						
							| Position: | none | 
						
							| Bias voltage: | none | 
						
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							| Annealing: |  | 
						
							| Date: | 29. May 2019 | 
						
							| Temperature: | 80 °C | 
						
							| Duration: | 48 h | 
						
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							| Measurement results: |  | 
						
							| Voltage for Gain 100: | T = +20 °C: 377.5909824 V     T = -25 °C: 342.2346789 V | 
						
							| Voltage for Gain 150: | T = +20 °C: 385.4708225 V     T = -25 °C: 349.4938429 V | 
						
							| Voltage for Gain 200: | T = +20 °C: 389.7996725 V     T = -25 °C: 353.5724051 V | 
						
							| Gain/Voltage slope at M = 100: | T = +20 °C: 4.554341761 V-1     T = -25 °C: 4.942404452 V-1 | 
						
							| Gain/Voltage slope at M = 150: | T = +20 °C: 9.79943018 V-1     T = -25 °C: 9.988649364 V-1 | 
						
							| Gain/Voltage slope at M = 200: | T = +20 °C: 14.28008288 V-1     T = -25 °C: 16.59756661 V-1 | 
						
							| Break-through voltage: | T = +20 °C: 405.2941889 V     T = -25 °C: 368.6782534 V | 
						
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							| Notes: | Wrong wafer number in serial number, correct wafer number is 3. | 
					
					
						
					
					Characteristics
					
						
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					Progression of the current during irradiation
					
						
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