Show Hamamatsu Avalanche Photo Diode 0902009179
This is all the information about APD 0902009179. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009179 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0902009179/2810031604 |
| Unit: |
#2565 (barcode 1309026906) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D12 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.8 V |
| Dark current: |
7.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
295 |
| Position in Box: |
5 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10359 |
| |
|
| Shipment: |
|
| Grid number: |
183 |
| Position in grid: |
18 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
378.8 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.9984797 V T = -25 °C: 343.6983475 V |
| Voltage for Gain 150: |
T = +20 °C: 386.9208224 V T = -25 °C: 351.0374508 V |
| Voltage for Gain 200: |
T = +20 °C: 391.3356834 V T = -25 °C: 355.1697687 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.567865017 V-1 T = -25 °C: 4.718495669 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.009745428 V-1 T = -25 °C: 9.521302907 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.92150217 V-1 T = -25 °C: 15.03826862 V-1 |
| Break-through voltage: |
T = +20 °C: 406.9323862 V T = -25 °C: 370.4241576 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
