Show Hamamatsu Avalanche Photo Diode 0902009174
This is all the information about APD 0902009174. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0902009174 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B13 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.9 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
295 |
| Position in Box: |
1 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10358 |
| |
|
| Shipment: |
|
| Grid number: |
183 |
| Position in grid: |
8 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
380.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.7122193 V T = -25 °C: 345.1970176 V |
| Voltage for Gain 150: |
T = +20 °C: 388.6712759 V T = -25 °C: 352.7291008 V |
| Voltage for Gain 200: |
T = +20 °C: 393.0818968 V T = -25 °C: 356.9192691 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.335567017 V-1 T = -25 °C: 4.221983789 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.235136133 V-1 T = -25 °C: 9.481001727 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.33626375 V-1 T = -25 °C: 14.81911823 V-1 |
| Break-through voltage: |
T = +20 °C: 403.2281769 V T = -25 °C: 372.7310949 V |
| |
|
| Notes: |
Wrong wafer number in serial number, correct wafer number is 3.
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
