Show Hamamatsu Avalanche Photo Diode 0703005706
This is all the information about APD 0703005706. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0703005706 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B03 |
Break-through voltage: |
423 V |
Voltage for Gain 100 (T=+25°C): |
394.2 V |
Dark current: |
9.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
287 |
Position in Box: |
2 |
EP1 batch: |
205 |
EP1 batch after irradiation: |
10438 |
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Shipment: |
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Grid number: |
15 |
Position in grid: |
6 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 393.5555148 V T = -25 °C: 357.3060168 V |
Voltage for Gain 150: |
T = +20 °C: 401.5672329 V T = -25 °C: 364.9743658 V |
Voltage for Gain 200: |
T = +20 °C: 406.0010389 V T = -25 °C: 369.3012641 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.32703387 V-1 T = -25 °C: 4.609753311 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.183994032 V-1 T = -25 °C: 9.096552091 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.26069062 V-1 T = -25 °C: 14.09886823 V-1 |
Break-through voltage: |
T = +20 °C: 418.8871478 V T = -25 °C: 385.1688297 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history