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Show Hamamatsu Avalanche Photo Diode 0823009032


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Subdetector specification:  
Serial: 0823009032
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E11
Break-through voltage: 409 V
Voltage for Gain 100 (T=+25°C): 380.4 V
Dark current: 4.6 nA
   
Screening Logistics:  
Available: No
Storage Box: 363
Position in Box: 34
EP1 batch: none
EP1 batch after irradiation: 10546
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 381.2367161 V     T = -25 °C: 345.5651809 V
Voltage for Gain 150: T = +20 °C: 389.0830404 V     T = -25 °C: 352.8844179 V
Voltage for Gain 200: T = +20 °C: 393.4386506 V     T = -25 °C: 356.9945831 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.538034898 V-1     T = -25 °C: 4.745355819 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.916352555 V-1     T = -25 °C: 9.660744381 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.66913346 V-1     T = -25 °C: 15.31883273 V-1
Break-through voltage: T = +20 °C: 408.3435451 V     T = -25 °C: 372.116115 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
21. Apr 2021 11:02:03 CEST jreher Updated box and position via API.
16. Apr 2021 22:01:21 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:34:53 CET jreher Updated box and position via API.
08. Oct 2020 18:16:44 CEST jreher Updated APD location via API.
08. Sep 2020 16:07:29 CEST vwerner Updated APD batch assignment via API.
22. Jun 2016 15:29:45 CEST Tobias Imported from Hamamatsu datasheet.