Show Hamamatsu Avalanche Photo Diode 0822008946
This is all the information about APD 0822008946. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0822008946 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G12 |
Break-through voltage: |
420 V |
Voltage for Gain 100 (T=+25°C): |
392.3 V |
Dark current: |
5.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
197 |
Position in Box: |
39 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10166 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 392.3066568 V T = -25 °C: 356.1364831 V |
Voltage for Gain 150: |
T = +20 °C: 400.2573718 V T = -25 °C: 363.839849 V |
Voltage for Gain 200: |
T = +20 °C: 404.6508315 V T = -25 °C: 368.1708737 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.404544822 V-1 T = -25 °C: 4.637125599 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.58929497 V-1 T = -25 °C: 9.112629983 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.84049151 V-1 T = -25 °C: 14.08700962 V-1 |
Break-through voltage: |
T = +20 °C: 420.0789595 V T = -25 °C: 383.9370238 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history