Show Hamamatsu Avalanche Photo Diode 0822008935
This is all the information about APD 0822008935. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0822008935 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A09 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
387.1 V |
Dark current: |
4.9 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
197 |
Position in Box: |
31 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10166 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 387.312562 V T = -25 °C: 351.3872165 V |
Voltage for Gain 150: |
T = +20 °C: 395.2911742 V T = -25 °C: 358.908373 V |
Voltage for Gain 200: |
T = +20 °C: 399.7147199 V T = -25 °C: 363.1449476 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.445483993 V-1 T = -25 °C: 4.713308868 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.632013019 V-1 T = -25 °C: 9.429391721 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.95673755 V-1 T = -25 °C: 14.68565193 V-1 |
Break-through voltage: |
T = +20 °C: 415.111604 V T = -25 °C: 378.9074136 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history