Show Hamamatsu Avalanche Photo Diode 0822008929
This is all the information about APD 0822008929. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0822008929 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0717006659/0822008929 |
| Unit: |
#3305 (barcode 1309028078) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.6 V |
| Dark current: |
5.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
197 |
| Position in Box: |
27 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10166 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.8115288 V T = -25 °C: 351.8886353 V |
| Voltage for Gain 150: |
T = +20 °C: 395.7360842 V T = -25 °C: 359.3749583 V |
| Voltage for Gain 200: |
T = +20 °C: 400.1176631 V T = -25 °C: 363.5851208 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.626818061 V-1 T = -25 °C: 4.893718773 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.184805651 V-1 T = -25 °C: 9.018630375 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.31349513 V-1 T = -25 °C: 15.84498951 V-1 |
| Break-through voltage: |
T = +20 °C: 414.5291017 V T = -25 °C: 378.1748678 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
