Show Hamamatsu Avalanche Photo Diode 0822008927
This is all the information about APD 0822008927. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0822008927 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F09 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
386.1 V |
| Dark current: |
5.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
197 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10166 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.8279875 V T = -25 °C: 350.2447371 V |
| Voltage for Gain 150: |
T = +20 °C: 393.7253226 V T = -25 °C: 357.6891722 V |
| Voltage for Gain 200: |
T = +20 °C: 398.0834259 V T = -25 °C: 361.8482503 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.654643593 V-1 T = -25 °C: 4.813563185 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.366614876 V-1 T = -25 °C: 9.862308265 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.64529636 V-1 T = -25 °C: 15.70118561 V-1 |
| Break-through voltage: |
T = +20 °C: 413.0903946 V T = -25 °C: 376.979626 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
