Show Hamamatsu Avalanche Photo Diode 0822008925
This is all the information about APD 0822008925. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0822008925 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0901009035/0822008925 |
| Unit: |
#3768 (barcode 1309040292) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E11 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
387.1 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
197 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10166 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.0124676 V T = -25 °C: 351.2017334 V |
| Voltage for Gain 150: |
T = +20 °C: 394.8917117 V T = -25 °C: 358.6767684 V |
| Voltage for Gain 200: |
T = +20 °C: 399.2639428 V T = -25 °C: 362.8639188 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.591928704 V-1 T = -25 °C: 4.790160979 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.081015937 V-1 T = -25 °C: 9.712876902 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.18422319 V-1 T = -25 °C: 15.34442639 V-1 |
| Break-through voltage: |
T = +20 °C: 414.2872139 V T = -25 °C: 378.0916392 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history