Show Hamamatsu Avalanche Photo Diode 0822008890
This is all the information about APD 0822008890. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0822008890 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H05 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.9 V |
| Dark current: |
4.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
197 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10166 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.7149565 V T = -25 °C: 349.2910128 V |
| Voltage for Gain 150: |
T = +20 °C: 392.6564296 V T = -25 °C: 356.735442 V |
| Voltage for Gain 200: |
T = +20 °C: 397.0619014 V T = -25 °C: 360.9066718 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.321728258 V-1 T = -25 °C: 4.774302921 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.26131996 V-1 T = -25 °C: 9.667500492 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.40336678 V-1 T = -25 °C: 15.28071366 V-1 |
| Break-through voltage: |
T = +20 °C: 404.4060531 V T = -25 °C: 375.0572718 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history