Show Hamamatsu Avalanche Photo Diode 0822008888
This is all the information about APD 0822008888. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0822008888 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0822008888/2513028538 |
| Unit: |
#2657 (barcode 1309025589) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H07 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.7 V |
| Dark current: |
3.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
358 |
| Position in Box: |
5 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10544 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.1329641 V T = -25 °C: 352.1250696 V |
| Voltage for Gain 150: |
T = +20 °C: 396.0745095 V T = -25 °C: 359.6718541 V |
| Voltage for Gain 200: |
T = +20 °C: 400.4916677 V T = -25 °C: 363.9079481 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.516393424 V-1 T = -25 °C: 4.783382155 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.80641473 V-1 T = -25 °C: 9.574587565 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.34411468 V-1 T = -25 °C: 15.09397758 V-1 |
| Break-through voltage: |
T = +20 °C: 416.1337346 V T = -25 °C: 379.7992326 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history