Show Hamamatsu Avalanche Photo Diode 0822008887
This is all the information about APD 0822008887. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0822008887 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H08 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389 V |
| Dark current: |
4.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
197 |
| Position in Box: |
41 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10166 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.3946776 V T = -25 °C: 353.3579492 V |
| Voltage for Gain 150: |
T = +20 °C: 397.2882777 V T = -25 °C: 360.907092 V |
| Voltage for Gain 200: |
T = +20 °C: 401.6761086 V T = -25 °C: 365.1512382 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.459050805 V-1 T = -25 °C: 4.688815992 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.707295975 V-1 T = -25 °C: 9.329018226 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.13062046 V-1 T = -25 °C: 14.58203716 V-1 |
| Break-through voltage: |
T = +20 °C: 417.15465 V T = -25 °C: 380.9603941 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
