Show Hamamatsu Avalanche Photo Diode 0821008840
This is all the information about APD 0821008840. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0821008840 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0821008850/0821008840 |
| Unit: |
#1143 (barcode 1309012787) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H10 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.7 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
195 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10155 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.2364685 V T = -25 °C: 347.5387717 V |
| Voltage for Gain 150: |
T = +20 °C: 391.0972981 V T = -25 °C: 354.9301024 V |
| Voltage for Gain 200: |
T = +20 °C: 395.476884 V T = -25 °C: 359.0931712 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.528263051 V-1 T = -25 °C: 4.733206852 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.864156043 V-1 T = -25 °C: 9.570872656 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.58727055 V-1 T = -25 °C: 15.0465243 V-1 |
| Break-through voltage: |
T = +20 °C: 409.9179622 V T = -25 °C: 373.2860549 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
