Show Hamamatsu Avalanche Photo Diode 0821008836
This is all the information about APD 0821008836. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0821008836 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D14 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
385.3 V |
Dark current: |
4.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
195 |
Position in Box: |
35 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10155 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 385.4850157 V T = -25 °C: 349.6589276 V |
Voltage for Gain 150: |
T = +20 °C: 393.4069051 V T = -25 °C: 357.0783624 V |
Voltage for Gain 200: |
T = +20 °C: 397.8092219 V T = -25 °C: 361.257309 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.425769451 V-1 T = -25 °C: 4.683938518 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.619484329 V-1 T = -25 °C: 9.429503853 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96851114 V-1 T = -25 °C: 14.84621161 V-1 |
Break-through voltage: |
T = +20 °C: 413.9210857 V T = -25 °C: 376.8720406 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history