Show Hamamatsu Avalanche Photo Diode 0821008811
This is all the information about APD 0821008811. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0821008811 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
376.1 V |
| Dark current: |
3.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
195 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10154 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.0764358 V T = -25 °C: 342.6606532 V |
| Voltage for Gain 150: |
T = +20 °C: 384.9132962 V T = -25 °C: 349.971124 V |
| Voltage for Gain 200: |
T = +20 °C: 389.2904957 V T = -25 °C: 353.7389216 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.521567413 V-1 T = -25 °C: 4.881673698 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.785383918 V-1 T = -25 °C: 7.946322569 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.1314396 V-1 T = -25 °C: 13.18579517 V-1 |
| Break-through voltage: |
T = +20 °C: 404.7862985 V T = -25 °C: 368.2958435 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
