Show Hamamatsu Avalanche Photo Diode 0820008785
This is all the information about APD 0820008785. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0820008785 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 1712019315/0820008785 |
Unit: |
#3761 (barcode 1309039425) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
A11 |
Break-through voltage: |
418 V |
Voltage for Gain 100 (T=+25°C): |
390.7 V |
Dark current: |
3.9 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
190 |
Position in Box: |
32 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10146 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
29. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
25. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 390.8539977 V T = -25 °C: 354.796874 V |
Voltage for Gain 150: |
T = +20 °C: 398.7560785 V T = -25 °C: 362.367321 V |
Voltage for Gain 200: |
T = +20 °C: 403.1402034 V T = -25 °C: 366.6098778 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.607721451 V-1 T = -25 °C: 4.877473064 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.102954527 V-1 T = -25 °C: 8.917772821 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.21082447 V-1 T = -25 °C: 15.60131573 V-1 |
Break-through voltage: |
T = +20 °C: 414.7281879 V T = -25 °C: 381.7284165 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history