Show Hamamatsu Avalanche Photo Diode 0820008765
This is all the information about APD 0820008765. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0820008765 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1914021386/0820008765 |
| Unit: |
#1298 (barcode 1309010981) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B05 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
202 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10165 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.7176605 V T = -25 °C: 349.8123958 V |
| Voltage for Gain 150: |
T = +20 °C: 393.6574951 V T = -25 °C: 357.3025806 V |
| Voltage for Gain 200: |
T = +20 °C: 398.0822722 V T = -25 °C: 361.5153188 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.608953217 V-1 T = -25 °C: 4.823515208 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.008979764 V-1 T = -25 °C: 8.929736138 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.7112937 V-1 T = -25 °C: 15.34994882 V-1 |
| Break-through voltage: |
T = +20 °C: 413.3451542 V T = -25 °C: 377.0117752 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
