Show Hamamatsu Avalanche Photo Diode 0819008657
This is all the information about APD 0819008657. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0819008657 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
404 V |
| Voltage for Gain 100 (T=+25°C): |
375.8 V |
| Dark current: |
4.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
292 |
| Position in Box: |
41 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10207 |
| |
|
| Shipment: |
|
| Grid number: |
116 |
| Position in grid: |
16 |
| Arrival for irradiation: |
11. Jun 2016 |
| Sent for analysis after irradiation: |
23. Jun 2016 |
| Return for assembly: |
11. Jul 2016 |
| |
|
| Irradiation: |
|
| Date: |
21. Jun 2016 |
| Dose used: |
37 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
21. Jun 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.4751657 V T = -25 °C: 341.1665785 V |
| Voltage for Gain 150: |
T = +20 °C: 384.3392621 V T = -25 °C: 348.4664714 V |
| Voltage for Gain 200: |
T = +20 °C: 388.7148566 V T = -25 °C: 352.5665709 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.447534972 V-1 T = -25 °C: 4.915393437 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.638961238 V-1 T = -25 °C: 9.164700482 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.92514654 V-1 T = -25 °C: 16.26693947 V-1 |
| Break-through voltage: |
T = +20 °C: 405.521178 V T = -25 °C: 367.7491454 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
